公司与主要的eda供应商紧密团结，共同开发设计套件，以更好地满足客户各种各样的设计需求。
参考流程
synopsys
华大九天
物理验证工具
| tech. node | process | process description | calibre | assura | argus |
|---|---|---|---|---|---|
| 0.11μm | eflash | p-sub, 1.5v/3.3v/5v | √ | ||
| 0.13μm | mixed-signal/rf | p-sub,1.2v/3.3v including rf | √ | ||
| 0.153μm | mcu | p-sub,5v including rf | √ | ||
| cmos | p-sub,7v | √ | |||
| 0.16μm | logic | p-sub,1.8v/3.3v | √ | ||
| mixed-signal/rf | p-sub,1.8v/3.3v, including rf | √ | |||
| 0.18μm | logic | p-sub, 1.8v/3.3v | √ | ||
| mixed-signal/rf | p-sub,1.8v/3.3v, including rf | √ | √ | ||
| hv | p-sub, 1.8v/5v | √ | |||
| 1.8v 18v vgs 18v vds hvmos process | √ | ||||
| mcu | p-sub, 3.3v/5v/6v | √ | √ | ||
| bcd | p-sub, 3.3v/5v | √ | |||
| 25vbcd | p-sub,1.8v&5v vgs 25v vds non-epi bcd | √ | |||
| p-sub,1.8v&5v vgs 25v vds p-epi bcd | √ | ||||
| eflash | p-sub,1.8v&3.3v&5v | √ | |||
| sourcedriver | 1.8v&18v | √ | |||
| 3.3v&13.5v | √ | ||||
| 3.3v&18v | √ | ||||
| bcd | 7-30v scalable p-epi bcd db | √ | |||
| db sbcd g2s 7v 80v process | √ | ||||
| db sbcd g2s 80v 120v process | √ | ||||
| db sbcd g3 process | √ | ||||
| ab sbcd g1 7v 30v process | √ | ||||
| ab sbcd g1s process | √ | ||||
| eeprom | eeprom | √ | |||
| 0.25μm | bcd | 5v vgs 25v vds 2p5m | √ | ||
| 5v vgs 12v/45v vds 2p5m | √ | ||||
| 30v60v | √ | ||||
| 1p4m salicide 5v analog | √ | ||||
| 0.35μm | flatcell | p-sub,5v spqm, 0.7μm *0.7μm flatcell cell, single poly, 4 metal | √ | √ | |
| p-sub,3.3v/5v, 0.7μm *0.7μm flatcell, single poly, | √ | √ | |||
| single metal | |||||
| p-sub, 3.5v/5v, 0.63μm *0.63μm flatcell, dual gate oxide | √ | ||||
| mixed-signal | p-sub,3.3v/5v | √ | √ | ||
| otp | mix otp dpqm 3.3v 5v | √ | |||
| bcd | 3.3v vgs 12v_15v vds | √ | |||
| logic g2 | 3.3v | √ | |||
| 0.5feol/0.35beol | mixed-signal | 0.5feol/0.35beol | √ | ||
| 0.5feol/0.35beol 1.8ff/um^2 | √ | ||||
| plain-poly, 3~5v | √ | ||||
| 0.5μm | mixed-signal | enhance analog for 5v | √ | ||
| p-sub,5v, with pip/high p2/lvt/depletion | √ | √ | √ | ||
| p-sub,5v, with pip/high p2/lvt/depletion 1.8ff cpip | √ | ||||
| hv | p-sub,40v/25v process | √ | √ | ||
| p-sub,deep nwell 5v process | √ | √ | |||
| p-sub,5v/18v process | |||||
| bcd | 0.5um 15v(vgs)/15v(vds) dptm bcdmos process | √ | √ | ||
| 0.5um 5v(vgs)/15v(vds) dptm bcdmos process | √ | √ | |||
| 0.5um 5v(vgs)/25v(vds) dptm bcdmos process | √ | √ | |||
| 0.5um 25v(vgs)/25v(vds) dptm bcdmos process | √ | √ | |||
| 0.5um 5v(vgs)/40v(vds) dptm bcdmos process | √ | ||||
| 0.5μm feol 0.6μm beol | |||||
| p-sub,18v/20v thick_ox bcdmos process | √ | √ | |||
| p-sub,5v/20v thin_gox bcdmos process | √ | √ | |||
| p-sub,5v/40v thin_gox bcdmos process | √ | √ | |||
| p-sub,25v/40v thick_gox bcdmos process | √ | √ | |||
| 0.6μm | logic | p-sub,5v,plain poly, before n-rom | √ | ||
| p-sub,lv,plain poly, before n-rom | √ | ||||
| n-sub,5v,n-rom before plain poly | √ | ||||
| mixed- signal | p-sub, 5v, pip/high p2 | √ | |||
| p-sub, 5v, pip/high p2,lvt, depletion | √ | ||||
| hv | n-sub, 5v-18v | √ | |||
| 1.0μm | mglv | n-sub,1.5-5v | √ | ||
| n-sub,3.0-5v | √ | ||||
| hv | p-sub,5v/40v | √ | |||
| p-sub,5v/40v, 0.5μm backend, and thick al2 is option | √ | ||||
| p-sub,5v/25v, 0.5μm backend, and thick al2 is option(hv gox 600a) | √ | ||||
| 2.0μm | 36v | dn, nitride cap, 1m | √ | ||
| dn, nitride cap, p-, p , 1m | √ | ||||
| 18v (5μm tepi) | dn,sin cap, 1m(5μm epi) | √ |